Stress in silicon interlayers at the interface

Rights © 2007 American Institute of Physics.This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. The following article appeared in O’Callaghan, S., Monaghan, S., Elliott, S. D. and Greer, J. C. (2007) 'Stress in silicon interlayers at the SiOxGe interface', Applied Physics Letters, 90(14), pp. 143511 and may be found at http://aip.scitation.org/doi/abs/10.1063/1.2713122