Terahertz Responsivity Calculation of Unipolar Diodes Based on Transistor Channels Model

In this contribution, we propose an analytical approach for the Responsivity calculation of the nanochannel diodes. The analytical model is based on the total current of HEMT transistor channels in Ref. [1] with distance channel-gate tends to infinity. This consideration (ungated transistor) leads to determine the admittance at the nanochannel diode terminals. The admittance elements are then used to calculate the impedance and therefore the Responsivity of the diode. The impedance and the Responsivity exhibit resonances in the terahertz domain which are discussed as functions of the device geometry, operating temperature and applied voltage. Moreover, the high quality resonance can improve the detection of their frequencies. Indeed, the analysis of the Responsivity generated from the power signal is useful for the optimization of Terahertz detectors applications. The results will be compared with the admittance calculated by using the hydrodynamic approach in Ref. [2] where the smallsignal elements of homogenous diodes in Terahertz frequencies are determined. Key–Words:Unipolair diodes (SSD), Terahertz (THz), resonances, Responsivity analytical model.