The Role of Interface State Density in I-V Characteristics of Metal-Semiconductor Contact With Interfacial Layer

The metal-insulator-semiconductor (MIS) diode is the most useful device in the study of semiconductor surfaces. The current-voltage data of the metal-insulatorsemiconductor Schottky diode are simulated using thermionic emission diffusion equation taking into account the interfacial layer parameters. The calculated current–voltage data are fitted into ideal thermionic emission diffusion equation to see the apparent effect of interfacial layer parameters on current transport. Due to the presence of interfacial layer the Schottky contact behave as an ideal diode of apparently high barrier height, but with high value of ideality factor as considered for a pure Schottky contact without interfacial layer. The behavior of apparent barrier height and ideality factor with interfacial layer due to the presence of interface state density is discussed. KeywordsSchottky diode, barrier heights, interfacial layer, interface density, I-V Characteristics.