Method and apparatus for producing group-iii nitrdes

50-100A LiGaO, Substrate J.C. Zolper, R.J. Shul, A.G. Baca, R.G. Wilson, S.J. Pearton, R.A. Stall, “Ion-Implanted GaN junction field effect tran sistor” 1996 Appl. Phys. Lett., 68, (16). H. Morkoc, S. Strite, G.B. Gao, M.E. Lin, B. Sverdlov and M. Burns, “Large-band-gap SIC, III-V nitride, and II-VI ZnSe based semiconductor device technologies' 1994 J. Appl. Phys. 76, 1367. T.P. Chow and Tyagi, “Wide Bandgap Compound Semicon ductors for Superior High-Voltage Unipolar Power Devices' 1994 IEEE Trans. Electon Devices. 41, 1481.