Replacement Gate High-k/Metal Gate nMOSFETs Using a Self-Aligned Halo-Compensated Channel Implant
IEEE Transactions on Electron Devices(2020)
摘要
A device design technique for boosting output resistance (Rout) characteristics of long-channel halo-doped nMOSFETs for replacement gate (RMG) high-k/metal gate (HK/MG) devices is proposed based on numerical simulations. We show that the self-aligned halo-compensated channel implant (HCCI) that is carried out after dummy poly gate removal provides compensation for the conventional halo doping. Thi...
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关键词
Logic gates,Implants,Doping,MOSFET,Electric potential,Performance evaluation,Optimization
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