Reliability Improvement of GaN Devices on Free-Standing GaN Substrates
IEEE Transactions on Electron Devices（2018）
Key words
2-D electron gas (2-DEG) concentration and mobility,drain saturation current,dynamic on resistance and proton irradiation,free-standing GaN (FS-GaN),metal-insulator-semiconductor (MIS)-AlGaN/GaN high-electron mobility transistors (HEMTs),sapphire,self-heating effect,Si,substrate
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