Towards Scalable Reconfigurable Field Effect Transistor using Flash Lamp Annealing

For decades the miniaturization of logic circuitry was a result of down scaling of the field effect transistor (FET). This scaling has reached its end and, therefore, new device materials and concepts have been under research for the last years. One approach is to increase the functionality of an individual device rather than scaling down its size. Such a device concept is the reconfigurable FET (RFET), which can be configured to n- or p- polarity dynamically [1] .