A Novel High-Density and Low-Power Ternary Content Addressable Memory Design Based on 3D NAND Flash

H. Z. Yang,P. Huang,R. Z. Han,Y. C. Xiang, Y. Feng, B. Gao,J. Z. Chen, L. F. Liu,X. Y. Liu,J. F. Kang

2020 IEEE Silicon Nanoelectronics Workshop (SNW)（2020）

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摘要

A novel ternary content addressable memory (TCAM) design based on 3D NAND Flash is proposed, in which two adjacent flash cells consist of one TCAM cell. HSPICE simulations show that the proposed TCAM has the ultra-low energy consumption of 0.298 fJ/bit/search for a 64-bit word and the cell density with 96layer 3D NAND is reduced ~582 times compared to the conventional CMOS-based TCAMs.

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