An In Situ Electrical Transport Measurement System Under Ultra-High Vacuum

Low-dimensional materials exhibit exotic properties and have attracted widespread attention. However, many low-dimensional materials are highly sensitive to air, making it challenging to investigate their intrinsic properties with ex situ measurements. To overcome such challenges, here, we developed a system combined with sample growth, electrode deposition, and in situ electrical transport measurement under ultra-high vacuum condition. The in situ deposition of electrodes enables desired ohmic electrical contacts between the probes and samples, which allows continuous temperature dependent resistance (R-T) measurements. Combined with a scanning tunneling microscope, surface morphology, electronic structure, and electrical transport properties of the same sample can be systematically investigated. We demonstrate the performance of this in situ electrical transport measurement system with three-unit-cell thick FeSe films grown on Nb-doped SrTiO3(001) substrates, where a low-noise R-T curve with a zero-resistance superconducting transition temperature of similar to 30 K is observed.