Silicon X-ray absorption in the Galactic ISM: the gaseous component

arxiv(2020)

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摘要
We present a detailed analysis of the gaseous component of the Si K edge using high-resolution Chandra spectra of low-mass X-ray binaries. We fit the spectra with amodified version of the ISMabs model, including new photoabsorption cross sectionscomputed for all Si ionic species. We estimate column densities for Si i, Si ii, Si iii, Si xii and Si xiii, which trace the warm, intermediate temperature and hot phases of the Galactic interstellar medium. We find that the ionic fractions of the first two phases are similar. This may be due to the physical state of the plasma determined by the temperature or to the presence of absorber material in the close vicinity of the sources. Our findings highlight the need for accurate modeling of the gaseous component before attempting to address the solid component.
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关键词
galactic ism,silicon,absorption,gaseous component,x-ray
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