Understanding ESD Induced Thermal Mechanism in FinFETs Through Predictive TCAD Simulation
2020 IEEE International Reliability Physics Symposium (IRPS)(2020)
摘要
A predictive ESD TCAD deck including the workflow is developed for the 12nm FinFET technology. ESD failure in the I/O FET and ESDNFET is analyzed through TCAD simulation with calibrated silicon fin dimension-dependent thermal conductivity.
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关键词
ESD,FinFET,Thermal effects,TCAD,TLP
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