Understanding ESD Induced Thermal Mechanism in FinFETs Through Predictive TCAD Simulation
2020 IEEE International Reliability Physics Symposium (IRPS), pp. 1-4, 2020.
A predictive ESD TCAD deck including the workflow is developed for the 12nm FinFET technology. ESD failure in the I/O FET and ESDNFET is analyzed through TCAD simulation with calibrated silicon fin dimension-dependent thermal conductivity.
Full Text (Upload PDF)
PPT (Upload PPT)