Understanding ESD Induced Thermal Mechanism in FinFETs Through Predictive TCAD Simulation

2020 IEEE International Reliability Physics Symposium (IRPS), pp. 1-4, 2020.

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Keywords:
ESDFinFETThermal effectsTCADTLP

Abstract:

A predictive ESD TCAD deck including the workflow is developed for the 12nm FinFET technology. ESD failure in the I/O FET and ESDNFET is analyzed through TCAD simulation with calibrated silicon fin dimension-dependent thermal conductivity.

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