A Pulsed RTN Transient Measurement Technique: Demonstration on the Understanding of the Switching in Resistance Memory
2020 IEEE International Reliability Physics Symposium (IRPS)(2020)
摘要
The oxygen vacancy and mobile ions play major role on the resistance switching in a typical RRAM by the modulation of filament conduction. It is also known that soft-breakdown played a major role on the switching mechanism. However, the understanding of the mechanism involved in the soft-breakdown is not clear enough. In this paper, we demonstrated a pulsed RTN transient measurement technique which enables the determination of trap generation and its evolution with time. On the demonstrated sample with a HfON/Al
2
O
3
MIM structure, different operations will generate different traps which can be revealed from the trap profiling. The soft-breakdown path can then be delineated for forming, SET/RESET processes. The results show that the path behaves like a cone, widening at the bottom electrode and narrowing on the top, with a neck and waist near 2 electrodes, which can properly describe the RRAM operations.
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关键词
Resistance memory,RTN,Soft-breakdown,RTN transient measurement,Oxygen-vacancy-based RAM
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