A Deep Insight Into the Degradation of 12-kV 4H-SiC MOSFETs Under Repetitive Unclamped Inductive Switching StressesXT Zhou,HY Su,RF Yue,G Dai,JT Li,Y Wang,ZP YuIEEE TRANSACTIONS ON POWER ELECTRONICS（2018）引用 49|浏览4暂无评分AI 理解论文溯源树样例生成溯源树，研究论文发展脉络Chat Paper正在生成论文摘要
