Development of a neutron imaging sensor using INTPIX4-SOI pixelated silicon devices

Kamiya Y., Miyoshi T.,Iwase H.,Inada T., Mizushima A., Mita Y.,Shimazoe K.,Tanaka H., Kurachi I.,Arai Y.

Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment（2020）

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摘要

We have developed a neutron imaging sensor based on an INTPIX4-SOI pixelated silicon device. Neutron irradiation tests are performed at several neutron facilities to investigate sensor’s responses for neutrons. Detection efficiency is measured to be around 1.5% for thermal neutrons. Upper bound of spatial resolution is evaluated to be 4.1±0.2μm in terms of a standard deviation of the line spread function.

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