Tileable Monolithic ReRAM Memory Design

2020 IEEE Symposium in Low-Power and High-Speed Chips (COOL CHIPS)(2020)

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摘要
Non-volatile memory, such as resistive RAM (ReRAM), is compatible with standard CMOS logic processes, allowing a sizable main memory system to be integrated into a CPU's die. ReRAM bitcells are fabricated within crosspoint sub-arrays that leave the bulk of transistors underneath the sub-arrays vacant. This permits placing the memory system over other logic. We propose a tileable, centralized ReRAM design over a large last level cache. This design takes advantage of ReRAMs unique characteristics while still providing flexibility to designers.
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关键词
Crosspoint architectures,ReRAM and on-die main memory systems.
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