Laser Annealing Enhanced the Photophysical Performance of Pt/n-PSi/ZnO/Pt-Based Photodetectors

•Thermal and the photon energies were coupled to synthesize n-PSi/ZnO NCs metal–semiconductor-metal (MSM) UV photodetector.•The number of pulses determined the morphological and optical properties of the metal–semiconductor-metal (MSM) UV photodetector.•The responsivity of the laser annealed n-PSi/ZnO NCs can reach as high as 6.35 A/W.•The response and recovery times are as low as 0.30 s and 0.26 s, respectively.•The current gain under 380 nm UV illumination is 38.72.•Achievement of good stability, repeatability and photoresponse of these devices.