A simplified model to predict resistivity profiles in Continuous-feeding Cz-silicon crystals

Journal of Crystal Growth(2020)

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摘要
•A continuous-feeding Cz method is used to produce electronic-grade silicon crystals.•The resistivity profile in CCz-Si crystals can be predicted based on a simple model.•A model is used to study and optimize the impurity content in CCz-Si crystals.•The evaporation rate of arsenic can be deduced as fitting parameter in the model.
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关键词
A1. Doping,A1. Segregation,A1. Impurities,A2. Czochralski method,A2. Single crystal growth,B2. Semiconducting silicon
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