Investigation of Read Disturb and Bipolar Read Scheme on Multilevel RRAM-Based Deep Learning Inference Engine
IEEE Transactions on Electron Devices(2020)
摘要
The multilevel resistive random access memory (RRAM)-based synaptic array can enable parallel computations of vector–matrix multiplication for machine learning inference acceleration; however, any conductance drift of the cell may induce an inference accuracy drop because the analog current is summed up along the column. In this article, the read disturb-induced conductance drift characteristic is...
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关键词
Resistance,Stress,Electrical resistance measurement,Mathematical model,Machine learning,Random access memory,Computational modeling
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