A 28GHz Two-Way Current Combining Stacked-FET Power Amplifier in 22nm FD-SOI
2020 IEEE Custom Integrated Circuits Conference (CICC)(2020)
摘要
We present a two-way current combining power amplifier (PA) for 28GHz wireless communication. To boost the saturated output power (P
SAT
) and maintain a high power-added efficiency (PAE), a differential 3-stacked transistors structure is used for the unit PA cell. The stability factor and the PAE are improved with capacitive neutralization and shunt inductor intermediate node matching. Reliability issues under a 2.4V supply voltage are relieved with properly designed biasing and gate capacitances. The PA is implemented in a 22nm FD-SOI technology with a chip core area of 0.21 mm
2
, Measurement results show that the PA achieves a power gain of 27dB and a PSAT of 21.7dBm with a maximum PAE of 27.1% at 28GHz. The output 1dB compression point (P
1aB
) is 19.1 dBm. Measured PAE at P
1dB
and 6dB power back-off are 23% and 10.3%, respectively.
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关键词
power amplifier,28GHz,millimeter wave,current combining,stacked-FET PA,FD-SOI
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