Measurements of Single Event Upset in ATLAS IBL

Balbi G.,Barbero M.,Beccherle R., Bindi M.,Breugnon P., Butti P., Cinca D., Dickinson J.,Ferrere D.,Fougeron D., Garcia-Sciveres M.,Pascual J. Garcia,Gaudiello A., Gemme C., Giangiacomi N.,Hemperek T., Jeanty L., Kepka O., Kocian M., Lantzsch K., Liu P.,Martin C., Mekkaoui A., Menouni M.,Potamianos K.,Rozanov A., Takubo Y., Wensing M.

JOURNAL OF INSTRUMENTATION（2020）

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摘要

Effects of Single Event Upsets (SEU) and Single Event Transients (SET) are studied in the FE-I4B chip of the innermost layer of the ATLAS pixel system. SEU/SET affect the FE-I4B Global Registers as well as the settings for the individual pixels, causing, among other things, occupancy losses, drops in the low voltage currents, noisy pixels, and silent pixels. Quantitative data analysis and simulations indicate that SET dominate over SEU on the load line of the memory. Operational issues and mitigation techniques are presented.

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关键词

Performance of High Energy Physics Detectors,Radiation damage to electronic components,Radiation-hard electronics,Si microstrip and pad detectors

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