Monolayer MoSe₂-Based Tunneling Field Effect Transistor for Ultrasensitive Strain Sensing
IEEE Transactions on Electron Devices(2020)
摘要
This article presents a detailed investigation of the impact of mechanical strain on transition metal dichalcogenide (TMD) material-based tunneling field-effect transistor (TFET). First, the impact of mechanical strain on material parameters of MoSe
2
is calculated using the first principle of density functional theory (DFT) under meta-generalized gradient approximation (MGGA). The device performance of the TMD TFET has been studied by solving the self-consistent 3-D Poisson and Schrodinger equations in nonequilibrium Green’s function (NEGF) framework. The results demonstrate that both
${I}_{\scriptscriptstyle {\rm {ON}}}$
and
${I}_{\scriptscriptstyle {\rm {OFF}}}$
increase with uniaxial tensile strain, however the change in
${I}_{\scriptscriptstyle {\rm {ON}}}/{I}_{\scriptscriptstyle {\rm {OFF}}}$
ratio remains small. This strain-dependent performance change in TMD TFET has been utilized to design an ultrasensitive strain sensor. The device shows a sensitivity (
$\Delta {I}_{\text {DS}}/{I}_{\text {DS}}$
) of 3.61 for a strain of 2%. Due to the high sensitivity to the strain, these results show the potential of using MoSe
2
TFET as a flexible strain sensor. Furthermore, the strained TFET is analyzed for backend circuit performance. It is observed that the speed and energy efficiency of ten-stage inverter chain based on controlled strain improve substantially in comparison to unstrained TFETs.
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关键词
TFETs,Strain,Tunneling,Performance evaluation,Photonic band gap,Capacitive sensors
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