GaN HEMTs on Si with Regrown Contacts and Cutoff/Maximum Oscillation Frequencies of 250/204 GHz

This work demonstrates the high-frequency and high-power performance capacity of GaN high electron mobility transistors (HEMTs) on Si substrates. Using a T-gate and n++-GaN source/drain contacts, the InAlN/GaN HEMT with a gate length of 55 nm and a source-drain spacing of 175 nm shows a maximum drain current ID,MAX of 2.8 A/mm and a peak transconductance gm of 0.66 S/mm. The same HEMT exhibits a f...