Optical Gain in Laser Heterostructures with an Active Area Based on an InGaAs/InGaAlAs Superlattice

L. Ya. Karachinsky,I. I. Novikov,A. V. Babichev,A. G. Gladyshev,E. S. Kolodeznyi,S. S. Rochas, A. S. Kurochkin,Yu. K. Bobretsova,A. A. Klimov,D. V. Denisov, K. O. Voropaev, A. S. Ionov,V. E. Bougrov,A. Yu. Egorov

Optics and Spectroscopy（2020）

引用 11|浏览24

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摘要

An active area based on InGaAs/InGaAlAs superlattice for laser diodes operating in the spectral range between 1535 and 1565 nm is proposed and realized practically. It is demonstrated that using a superlattice increases the mode gain at the same values of the pump-diode current density relative to a typical active-area design based on an array of InGaAs quantum wells.

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关键词

molecular beam epitaxy, vertical-cavity surface-emitting laser, heterostructure, active area, quantum well, superlattice

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