Chemical vapor transport synthesis, characterization and compositional tuning of ZrSxSe2−x for optoelectronic applications

•Growth of ZrSxSe2−x by CVT process is influenced strongly by selection of metal source particles.•Raman spectra of ZrSxSe2−x mixed alloys reveals presence of new modes not present in ZrS2 or ZrSe2 binary compounds.•TEM HAADF-STEM imaging provides validation of 1T atomic structure and presence of Hf impurities.•Stacked chalcogenide columns exhibit contrast variations to indicate homogenous mixing of S and Se in the crystals.