Switching Magnetic Anisotropy of SrRuO3 by Capping-Layer-Induced Octahedral Distortion

Materials with large perpendicular magnetic anisotropy (PMA) are candidates for spintronic devices, such as magnetic random-access memory, etc., due to their stable magnetic reference states. Because of shape anisotropy, the magnetic easy axis of oxide thin films favors in-plane orientation. In this Paper, we demonstrate a convenient means to control the magnetic anisotropy of SrRuO3 (SRO) ultrathin layers from in-plane to out-of-plane by capping with nonmagnetic materials. Tuning the anisotropy is achieved by imposition of symmetry mismatch at the interface-induced structural transition of SRO with suppressed octahedral tilt. These results suggest a potential direction for engineering magnetic oxide thin films with flexible tunable PMA using capping-layer-induced dissimilar symmetry.