Experimental Study of a Low-Voltage 4H-SiC Drift Step Recovery Diode

Sergey A. Shevchenko,Boris V. Ivanov,Artem A. Smirnov,Vladimir A. Ilyin,Alexey V. Afanasyev,Kirill A. Sergushichev

ieee conference of russian young researchers in electrical and electronic engineering（2020）

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摘要

The results of an experimental study of low-voltage 4H-SiC drift step recovery diodes (DSRDs) are presented. Theoretical analysis of the diodes’ operation has been carried out by Synopsys Sentaurus TCAD simulation using drift-diffusion charge transport approach including the effects of high injection and incomplete dopants ionization. The effect of picosecond switching of a low-voltage 4H-SiC DSRD is experimentally observed. The results of Synopsys TCAD simulation are in reasonable agreement with the experiment.

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关键词

picosecond switching,drift step recovery diode,silicon carbide,Synopsys Sentaurus TCAD,picosecond pulse generator

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