Prediction of Trap Occupancy for Random Telegraph Noise under Complex Waveforms

IEEE Electron Device Letters(2020)

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摘要
In this letter, an occupancy probability prediction (OPP) model is proposed for predicting the trap occupation states of random telegraph noise (RTN) under complex gate bias waveforms. This compact model is developed based on the random charging/discharging behaviors. It is verified by both theoretical simulations and experimental results. The model enables one to evaluate the state of each trap a...
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关键词
probability,random noise,semiconductor device models,semiconductor device noise
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