Simulations of Surface Transfer Doping of Hydrogenated Diamond by MoO3 metal oxide

2019 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS)(2019)

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摘要
In this work we investigate the surface transfer doping effect induced between hydrogen terminated diamond and Moo3. We simulated the interface of (100) MoO 3 surface and hydrogen terminated (100) diamond surface using fist principle methods such as Density Functional Theory (DFT). DFT simulation allowed us to calculate the band structure and charge transfer between the MoO 3 and the diamond materials. Analysis of the band structures and density of states shows that the Moo3is an electron acceptor and injects holes into the diamond structure.
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关键词
Surface transfer doping (STD),2D hole gas (2DHG),diamond
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