New Methodology for Series-Resistance-Immune MOSFET Parameter Extraction from Linear to Saturation Region
2019 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS)（2019）
摘要
A new methodology for MOSFET characterization and parameter extraction making use of the on-resistance characteristics R
on
(V
g
, V
d
)=V
d
/I
d
(V
g
, V
d
) and associated derivatives dR
on
/dV
g
and dR
on
/d
Vd
is proposed. This approach enables to eliminate the influence of source-drain series resistance R
sd
not only in linear region but also in non-linear region of MOSFET operation.
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关键词
saturation region,series-resistance-immune MOSFET parameter extraction,MOSFET operation,nonlinear region,linear region,source-drain series resistance,on-resistance characteristics,Vg
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