Effects of etching processes on surface dark current of long-wave infrared InAs/GaSb superlattice detectors

Xu Jiajia,Xu Zhicheng,Bai Zhizhong,Huang Min,Huang Aibo,Zheng Lulu,Zhou Yi,Chen Honglei,Chen Jianxin,Ding Ruijun,He Li

Infrared Physics & Technology（2020）

引用 4|浏览33

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摘要

•Etching of long-wave infrared InAs/GaSb type-II superlattice detectors was studied.•Wet and dry etching processes and their effect on the state of Sb were assessed.•Both free Sb and GaSb on the sidewall surface contribute to surface dark current.•An optimized Cl2/N2 inductively coupled plasma dry etching process was developed.•A high-quality 640 × 512 superlattice long-wave infrared focal plane array was fabricated.

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关键词

Dry etching,Dark current,Inductively coupled plasma,Long-wave infrared superlattice detector,Focal plane array,X-ray photoelectron spectroscopy

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