Bilayer indium gallium zinc oxide electrolyte-gated field-effect transistor for biosensor platform with high reliability

Hyun Woo Son,Ju Hyun Park,Myung Sic Chae,Bo Hyun Kim,Tae Geun Kim

Sensors and Actuators B: Chemical（2020）

引用 11|浏览5

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摘要

Bilayer IGZO-EGFETs for sensor platform with high reliability are proposed and evaluated pH-sensing property and reliability property about drift effect and drift voltage in 1X, 0.1X, 0.01X PBS in comparison with monolayer devices.

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关键词

Field-effect transistors,Oxide semiconductor,pH sensing,Biosensor,Reliability

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