3D-Stacked Strained SiGe/Ge Gate-All-Around (GAA) Structure Fabricated by 3D Ge Condensation
Device Research Conference（2019）
Key words
strained relaxed buffers,critical dimension,3D-stacked strained gate-all-around structure,GAA structure,incumbent silicon technology,carrier mobility,light effective mass,potential channel material,next-generation high-performance CMOS technology,multigate device,3D stacking channels,high mobility material,3D germanium condensation,SiGe-Ge
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