TEMPO: Fast Mask Topography Effect Modeling with Deep Learning
ISPD '20: International Symposium on Physical Design Taipei Taiwan September, 2020, pp. 127-134, 2020.
With the continuous shrinking of the semiconductor device dimensions, mask topography effects stand out among the major factors influencing the lithography process. Including these effects in the lithography optimization procedure has become necessary for advanced technology nodes. However, conventional rigorous simulation for mask topogr...More
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Best Paper of ISPD, 2020