The dependence of aluminum lattice orientation on semiconductor lattice parameter in planar InAs/Al hybrid heterostructures

Tiantian Wang,Candice Thomas,Rosa E. Diaz,Sergei Gronin,Donata Passarello,Geoffrey C. Gardner,Michael A. Capano,Michael J. Manfra

Journal of Crystal Growth（2020）

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摘要

•Aluminum thin films epitaxially grown on two-dimensional InAs quantum wells are characterized.•The normal orientation of aluminum film changes as the surface lattice parameter is varied.•The driving force of the aluminum orientation is analyzed.

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关键词

A1. Crystal structure,A1. Transmission electron microscopy,A1. X-ray diffraction,A3. Molecular beam epitaxy,B2. Semiconducting III–V materials

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