Electronic transport and noise characterization in MoS2

A study of the diffusivity in Molybdenum disulfide as a function of the applied electric field and temperature has been developed in this work by means of an ensemble Monte Carlo simulator. The analysis of the different scattering types indicates that the transitions to the upper valleys have an important effect over the noise and the velocity fluctuations, showing an influence over the frequency response of the diffusivity. Indeed, the low-frequency value of the diffusion coefficient decreases with the increase of the applied electric field, presenting a wider white-noise regime. The values of the diffusion coefficient are one order of magnitude lower than in Silicon and two orders than in graphene. Our results also evidence that the ambient temperature is a key factor to obtain competitive mobilities in this material: at room temperature the degradation of transport produced by the strong scattering activity in the upper valleys leads to mobilities close to 150 cm(2) V-1 s(-1), while in the lower valley-dominated regime at reduced temperatures the mobility rises up to 5400 cm(2) V-1 s(-1).