Nonvolatile Ferroelectric Field Control of the Anomalous Hall Effect in BiFeO3/SrRuO3 Bilayer

Here, the BiFeO3/SrRuO3 heterostructure is fabricated and the anomalous Hall effect (AHE) is investigated. The nonmonotonic anomalous Hall resistivity behavior inBiFeO(3)/SrRuO(3 )originates from the inhomogeneous SrRuO3 layer instead of the topological Hall effect. It is surprising that the AHE in the BiFeO3/SrRuO3 structure can be manipulated by switching the ferroelectric polarization of BiFeO3. Furthermore, the modulation of AHE in SrRuO3 under ferroelectric polarization is discussed with respect to first-principles calculations and originates from the change of band structure around the Fermi level. The ferroelectric-manipulated AHE suggests a pathway to realize nonvolatile, reversible, and low-energy-consuming voltage-controlled spintronic devices.