Ohmic contacts study of P⁺N diodes on (111) and (100) diamond

Lya Fontaine,Karine Isoird,Josiane Tasselli,Patrick Austin, Alain Cazarre,Amine Boussadi,Jocelyn Achard,Marie-Amandine Pinault-Thaury

2019 IEEE 13th International Conference on Power Electronics and Drive Systems (PEDS)（2019）

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摘要

Pseudo-vertical P ⁺ N diamond diodes are fabricated. We focused on the determination of specific contact resistance of Ti-based contacts for (111) and (100) p-type diamond layers doped around 10 ¹⁹ at/cm ³ using circular Transfer Length Method (cTLM). Ohmic behavior is obtained and the variation of the specific contact resistance is discussed.

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关键词

specific contact resistance,Ti-based contacts,Ohmic contacts,(100) diamond,(111) diamond,pseudo-vertical P+N diamond diodes,doping,circular transfer length method,epitaxial growth,Ti-Pt-Au-C,C

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Ohmic contacts study of P+N diodes on (111) and (100) diamond

Ohmic contacts study of P⁺N diodes on (111) and (100) diamond