Quantitative 3-D Model to Explain Large Single Trap Charge Variability in Vertical NAND Memory
2019 IEEE International Electron Devices Meeting (IEDM)（2019）
Key words
vertical NAND memory,TCAD model,junction position,local carrier density,large single trap charge variability,charge placement,quantitative 3D model,3D NAND flash read current,linear response,size 12.0 nm
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