22nm STT-MRAM for Reflow and Automotive Uses with High Yield, Reliability, and Magnetic Immunity and with Performance and Shielding Options

W.J. Gallagher,George Lee,Yi-Chun Shih,Chia-Fu Lee,Po-Hao Lee,Roger Wang,Kuei Hung Shen,J. J. Wu,Wayne Wang,Harry Chuang,Eric Chien,Tien-Wei Chiang,Jian-Cheng Huang,Meng-Chun Shih,C.Y. Wang,Chih-Hui Weng,Sean Chen, Christine Bair

2019 IEEE International Electron Devices Meeting (IEDM)（2019）

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摘要

We demonstrate high yield results from a solder-reflow-capable spin-transfer-torque MRAM embedded in 22nm ultra-low leakage (ULL) CMOS technology. The technology supports -40 to 150°C operation and data retention though six solder reflow cycles and far exceeding 10 years at 150°C. Ten year native magnetic field immunity is >1100 Oe at 25°C at the 1ppm bit upset level. A shield-in-package solution demonstrates <; 1ppm bit upset rates from a disc magnet providing 3.5 kOe disturb field exposure for ~80 hours at 25°C. Trading off reflow capability, using smaller CD magnetic tunnel junctions, higher performance is achieved, for example read signal development times of 6ns at 125°C and average write pulse times slightly over 30ns at -40°C in a 20Mb design.

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关键词

bit upset level,shielding options,ULL CMOS technology,bit upset rates,CD magnetic tunnel junctions,ultra-low leakage CMOS technology,data retention,solder-reflow-capable spin-transfer-torque MRAM,STT-MRAM,reflow capability,field exposure,disc magnet,shield-in-package solution,year native magnetic field immunity,solder reflow cycles,temperature -40.0 degC to 150.0 degC,size 22.0 nm,time 6.0 ns,temperature 150.0 degC,storage capacity 20 Mbit

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