Design Of A Ku-Band Hemt Gaas Single-Ended Resistive Mixer

2019 INTERNATIONAL CONFERENCE ON MICROWAVE AND MILLIMETER WAVE TECHNOLOGY (ICMMT 2019)(2019)

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摘要
Based on a low noise GaAs HEMT, a Ku-Band single-ended resistive mixer is designed for a Ku-Band system with 14 GHz RF frequency and 2 GHz-3 GHz IF frequency. The simulation results show that the mixer has low distortions and good flatness. The mixer is fabricated on a TLY-5 circuit board. The measurement results show that, when the IF frequency varies from 2 GHz to 3 GHz, the conversion loss ranges from 8 dB to 9.3 dB and the gain flatness is within 1.3 dB. The output power 1 dB compression point is 12 dBm and the output spurious rejection is better than 30 dBc.
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关键词
IF frequency,output power compression point,Ku-Band system,RF frequency,low distortions,TLY-5 circuit board,Ku-band HEMT gallium arsenide single-ended resistive mixer design,low noise HEMT,frequency 14.0 GHz,frequency 2.0 GHz to 3.0 GHz,loss 8.0 dB to 9.3 dB,gain 1.3 dB,GaAs
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