Design Considerations for GaN Based Converters

Wide bandgap devices permits power converters designer to accomplish new levels of efficiency, power density and improve reliability. Today Gallium-Nitride transistors are the sharp edge for any new power converters and inverters design. However, the new technology bring-out new boundaries for designers especially in terms of available switching speed. In this paper performance analysis of Gallium-Nitride transistors is presented. Begin with understating the electrical model of Gallium-Nitride transistors, comprehend its behavior focusing on the parasitic elements and theirs power dissipations, then the inherit constrains on operating frequency upper boundary of basic switch, boost and buck converters. And last, case study of finding the upper switching frequencies boundaries for EPC Gallium-Nitride transistors family.