High-Density Multiple Bits-per-Cell 1T4R RRAM Array with Gradual SET/RESET and its Effectiveness for Deep Learning
international electron devices meeting(2019)
摘要
We present the first demonstration of 1T4R Resistive RAM (RRAM) array storing two bits per RRAM cell. Our HfO 2 - based RRAM is built using a logic foundry technology that is fully compatible with the CMOS back-end process. We present a new approach to program RRAM cells using gradual SET/RESET pulses while minimizing disturbances on adjacent cells (belonging to the same 1T4R RRAM structure) - this new approach makes our multiple-bits-per-cell 1T4R RRAM array demonstration possible. We report over 106 cycles of endurance and a projected 10-year retention at 120°C. Using measured data from our 2 bits- per-cell 1T4R RRAM array, we analyze multiple deep learning applications and demonstrate high degrees of inference accuracy (within 0.01% of ideal values).
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关键词
RRAM cell,multiple deep learning applications,multiple-bits-per-cell 1T4R RRAM array,1T4R resistive RAM array
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