A Silicon Photonics Technology for 400 Gbit/s Applications

F. Boeuf,S. Monfray,S. Jan, C. Deglise, J. R. Manouvrier,C. Durand,A. Simbula, D. Goguet, P. Bar,D. Ristoiu,F. Leverd, A. Fincato, L. Babaud, A. Daverio, M. Binda, A. Bazzotti,A. Canciamilla,L. Ramini, M. Traldi,P. Gambini,L. Maggi,J. F. Carpentier,P. Le Maitre,M. Shaw,S. Cremer,N. Vulliet,C. Baudot

international electron devices meeting（2019）

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摘要

A Silicon photonics platform operating at 100 Gbit/s (53Gbaud-PAM4) per lane is demonstrated. Integration of 60 GHz High-Speed Photodiode and efficient High-Speed Phase Modulator into a 400G-DR4 3D test chip is shown. Extension towards 400G-FR4 is addressed by the introduction of a SiN layer allowing wideband fiber to the chip optical coupling and polarization management.

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关键词

53Gbaud-PAM4,high-speed photodiode,high-speed phase modulator,400G-DR4 3D test chip,400G-FR,chip optical coupling,silicon photonics technology,Silicon photonics platform,bit rate 100.0 Gbit/s,frequency 60.0 GHz,Si

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