TDDB in a Deuterated Low-k Interlayer Dielectric

J. R. Lloyd, P. M. Lenahan, N. Mahmud, R. J. Waskiewicz

2019 IEEE International Integrated Reliability Workshop (IIRW)（2019）

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摘要

The behavior of normal and deuterated SiOC:H where the hydrogen in the dielectric was supplanted by deuterium was compared. The deuterated SiOC:H was seen to be significantly resistant to damage from TDDB (Time Dependent Dielectric Breakdown). These results strongly support the “Lucky Electron” model for TDDB degradation in low-k dielectrics containing hydrogen.

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关键词

TDDB,SiOCH,EDMR,Lucky Electron Model

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