Implementation of High Power RF Devices with Hybrid Workfunction and OxideThickness in 22nm Low-Power FinFET Technology

H.-J. Lee,B. Sell,Y. Zhang,S. Morarka,S. Rami,Q. Yu,M. Weiss,G. Liu, M. Armstrong, C. Y. Su, D. Ali

international electron devices meeting（2019）

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摘要

Unique High-Power FinFET device with multiple workfunction materials and oxide thickness under a common gate, dubbed as HyPowerFF, is introduced. The proposed devices are as reliable as high-voltage IO devices with up to 7.1V of breakdown voltage and provide 290GHz of f max suitable for power-efficient RF power-amplifier (PA) design.

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关键词

high power RF devices,hybrid workfunction,oxide thickness,high-voltage IO devices,power-efficient RF power-amplifier design,workfunction materials,high-power FinFET device,low-power FinFET technology,breakdown voltage,HyPowerFF,size 22.0 nm,frequency 290.0 GHz

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