Study of Internal Latchup Behaviors in Advanced Bulk FinFET Technology
international symposium on the physical and failure analysis of integrated circuits, 2019.
In this paper, Internal Latchup (ILU) behaviors are studied in an advanced bulk FinFET technology. The methodology of the ILU development and characterization are introduced and the ILU characteristics of thin oxide (SG) and thick oxide (EG) victim devices are discussed comprehensively. Comparison between 7nm and 14nm Bulk FinFET technolo...More
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