Dynamic Switching of SiC Power MOSFETs Based on Analytical Sub-Circuit Model

Compared to silicon counterparts, silicon carbide (SiC) power mosfets have lower on-state resistance and faster switching speed, which in turn makes them better candidates for high-voltage power switching applications. This creates a growing need to develop device models for such SiC power devices. The models that are currently being used are mostly physics-based models, which require all the phys...