Study on the effects of growth rate on GaN films properties grown by plasma-assisted molecular beam epitaxy

HePeng Zhang,JunShuai Xue,YongRui Fu,Mei Yang,YaChao Zhang,XiaoLing Duan,WeiTing Qiang,LanXing Li,ZhiPeng Sun,XiaoHua Ma,JinCheng Zhang,Yue Hao

Journal of Crystal Growth（2020）

引用 8|浏览10

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摘要

•High growth rate of GaN grown by MBE enables a better crystalline quality.•Low carbon concentration in GaN epilayer can be achieved at high growth rate.•Growth rate of GaN films can be controlled by varying N flux under Ga-rich regime.

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关键词

A1. Crystal structure,A1. Impurities,A1. Surfaces,A3. Molecular beam epitaxy,B1. Nitrides,B2. Semiconducting III-V materials

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