On the Discharge Transport Mechanisms Through the Dielectric Film in MEMS Capacitive Switches

IEEE/ASME Journal of Microelectromechanical Systems(2020)

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摘要
A method that allows the investigation of discharge transport mechanism in dielectric films used in MEMS capacitive switches or MIM capacitors or even bare dielectric films is presented. The method is based on monitoring the dielectric film surface or MIM top electrode potential decay rate and the dependence of conductivity on surface potential. The method has been applied in MEMS and MIMs with simultaneously deposited dielectric film to confirm the closeness of transport data in MIM and MEMS devices. The impact of non-uniform charging on local discharge rate and different dielectric film stoichiometry has been also assessed. Finally, the effect of surface leakage due to environment humidity has been also investigated. [2019-0159]
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关键词
RF-MEMS,discharging transport mechanisms,silicon nitride,surface leakage
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