Demonstration of a Dual-Band InAs/GaSb Type-II Superlattice Infrared Detector Based on a Single Heterojunction Diode

We propose and demonstrate a new single heterojunction structure for dual-band detection based on typeII InAs/GaSb superlattices grown by metal-organic chemical vapor deposition. The structure simply consists of a p-type midwavelength contact layer, an n-type mid-wavelength absorber and an n-type long-wavelength absorber. At a small reverse bias, the presence of a potential barrier in the valence ...